technical data npn high power silicon transistor qualified per mil - prf - 19500/371 devices qualified level 2n3902 2n5157 jan jantx maximum ratings ratings symbol 2n3902 2n5157 unit collector - emitter voltage v ceo 400 500 vdc emitter - base v oltage v ebo 5.0 6.0 vdc collector - base voltage v cbo 700 vdc base current i b 2.0 adc collector current i c 3.5 adc total power dissipation @ t a = +25 0 c (1) @ t c = +75 0 c (2) p t 5.0 100 w w operating & storage te mperature range t j, t stg - 65 to +200 0 c thermal characteristics characteristics symbol max. unit thermal resistance, junction - to - case r q jc 1.25 0 c/w 1) derate linearly 29 mw/ 0 c for t a > +25 0 c 2) derate linearly 0.8 w/ 0 c for t c > +75 0 c to - 3 (to - 204aa)* *see appendix a for package outline electrical characteristics characteristics symbol min. max. unit off characteristics collector - emitter cutoff current v ce = 325 vdc 2n3902 v ce = 400 vdc 2n5157 i ceo 250 250 m adc collector - emit ter cutoff current v be = 1.5 vdc; v ce = 700 vdc i cex 500 m adc emitter - base cutoff current v eb = 5.0 vdc 2n3902 v eb = 6.0 vdc 2n5157 i ebo 200 200 m adc on characteristics (3) base - emitter saturation voltage i c = 1.0 adc; i b = 0.1 adc i c = 3.5 adc; i b = 0.7 adc v be(sat) 1.5 2.0 vdc collector - emitter saturation voltage i c = 1.0 adc; i b = 0.1 adc i c = 3.5 adc; i b = 0.7 adc v ce(sat) 0.8 2.5 vdc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 080 3 120101 page 1 of 2
2n 3902, 2n5157 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) (con?t) forward - current transfer ratio i c = 0.5 adc; v ce = 5.0 vdc i c = 1.0 adc; v ce = 5.0 vdc i c = 2.5 adc; v ce = 5.0 vdc i c = 3.5 adc; v ce = 5.0 vdc h fe 25 30 10 5 90 collector - emitter sustaining voltage i c = 100 madc 2n3902 2n5157 v ceo(sus) 325 400 vdc dynamic characteristics small - signal short - circuit forward current transfer ratio i c = 0.2 adc; v ce = 10 vdc, f = 1 mhz ? h fe ? 2.5 25 output capacitance v cb = 10 vdc; i e = 0, 100 khz f 1.0 mhz c obo 250 pf switching characteristics turn - on time v cc = 125 vdc; i c = 1.0 a dc; i b1 = 0.1 adc t on 0.8 m s turn - off time v cc = 125 vdc; i c = 1.0 adc; i b1 = 0.1 adc; - i b2 = 0.50 adc t off 1.7 m s safe operating area dc tests (continuous) t c = +25 0 c; t 3 1.0 s (see figure 3 of mil - prf - 19500/371) test 1 v ce = 28.6 vdc, i c = 3.5 adc test 2 v ce = 70 vdc, i c = 1.43 adc test 3 v ce = 325 vdc, i c = 55 madc 2n3902 v ce = 400 vdc, i c = 35 madc 2n5157 switching tests load condition c (unclamped inductive load) t c = 25 0 c; duty cycle 10%; r s = 0.1 w (see figure 4 of mil - prf - 19500/371) test 1 t p = approximately 3 ms (vary to obtain i c) ; r bb1 = 20 w ; v bb 1 = 10 vdc; r bb2 = 3 k w ; v bb2 = 1.5 vdc; v cc = 50 vdc; i c = 3.5 adc; l = 60 mh; r = 3 w ; r l 14 w . test 2 t p = approximately 3 ms (vary to obtain i c) ; r bb1 = 100 w ; v bb1 = 10 vdc; r bb2 = 3 k w ; v bb2 = 1.5 vdc; i c = 0.6 adc v cc = 50 vdc; l = 200 mh; r = 8 w ; r l 83 w . switching tests load condition (clamped inductive load) t c = +25 0 c; duty cycle 10%. (see figure 5 of mil - prf - 19500/371) test 1 t p = approximately 30 ms (vary to obtain i c) ; r s = 0.1 w ; r bb1 = 20 w ; v bb 1 = 10 vdc; r bb2 = 100 w ; v bb2 = 1.5 vdc; v cc = 50 vdc; i c = 3.5 adc; l = 60 mh; r = 3 w ; r l 3 0 w . (a suitable clamping circuit or diode can be used.) clamp voltage = 400 +0, - 5 vdc 2n3902 clamp voltage = 500 +0, - 5 vdc 2n5157 (clamped voltage must be reached) 3.) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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